A Cornell-designed transistor may supercharge next-gen wireless tech while easing reliance on foreign gallium, according to The Cornell Chronicle.
The XHEMT device, built with ultra-thin gallium nitride on a high-quality aluminum nitride base, handles higher heat and power with fewer defects than current tech—ideal for 5G, 6G, and defense radar systems. Its design also slashes gallium use by orders of magnitude.
Researchers say this U.S.-made innovation could spark new markets and boost semiconductor resilience.
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